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d a t a sh eet product speci?cation supersedes data of 1995 may 18 file under integrated circuits, ic03 1996 feb 09 integrated circuits TEA1093 hands-free ic
1996 feb 09 2 philips semiconductors product speci?cation hands-free ic TEA1093 features line powered supply with: C adjustable stabilized supply voltage C power down function microphone channel with: C externally adjustable gain C microphone mute function loudspeaker channel with: C externally adjustable gain C dynamic limiter to prevent distortion C rail-to-rail output stages for single-ended or bridge-tied load drive C logarithmic volume control via linear potentiometer C loudspeaker mute function duplex controller consisting of: C signal envelope and noise envelope monitors for both channels with: externally adjustable sensitivity externally adjustable signal envelope time constant externally adjustable noise envelope time constant C decision logic with: externally adjustable switch-over timing externally adjustable idle mode timing externally adjustable dial tone detector in receive channel C voice switch control with: adjustable switching range constant sum of gain during switching constant sum of gain at different volume settings. applications line-powered telephone sets with hands-free/listening-in functions. general description the TEA1093 is a bipolar circuit intended for use in line-powered telephone sets. in conjunction with a member of the tea1060 family or pca1070 transmission circuits, the device offers a hands-free function for line powered telephone sets. it incorporates a supply, a microphone channel, a loudspeaker channel and a duplex controller with signal and noise monitors on both channels. ordering information type number package name description version TEA1093 dip28 plastic dual in-line package; 28 leads (600 mil) sot117-1 TEA1093t so28 plastic small outline package; 28 leads; body width 7.5 mm sot136-1
1996 feb 09 3 philips semiconductors product speci?cation hands-free ic TEA1093 quick reference data v sref = 4.2 v; v gnd =0v; i sup = 15 ma; v sup = 0 v (rms); f = 1 khz; t amb =25 c; pd = low; mutet = low; r l =50 w ; r vol =0 w ; measured in test circuit of fig.15; unless otherwise speci?ed. note 1. corresponds to 100 mw output power. symbol parameter conditions min. typ. max. unit i sup operating supply current (pin sup) 7 - 140 ma v bb stabilized supply voltage 3.35 3.6 3.85 v i bb(pd) current consumption from pin v bb in power-down condition pd = high; v bb = 3.6 v - 400 550 m a i sup(pd) current consumption from pin sup in power-down condition pd = high; v sup = 4.5 v - 55 75 m a g vtx voltage gain from pin mic to pin mout in transmit mode v mic = 1 mv (rms); r gat = 30.1 k w 12.5 15 17.5 db d g vtxr voltage gain adjustment with r gat - 10 - +10 db g vrx voltage gain in receive mode v rin = 20 mv (rms); r gar = 66.5 k w ; r l =50 w the difference between rin1 and rin2 to lsp1 or lsp2 single-ended load 15.5 18 20.5 db the difference between rin1 and rin2 to the difference between lsp1 and lsp2 bridge-tied load 21.5 24 26.5 db d g vrxr voltage gain adjustment with r gar - 15 - +15 db v o(p-p) bridge-tied load (peak-to-peak value) v rin = 150 mv (rms); r l =33 w ; note 1 - 5.15 - v swra switching range - 40 - db d swra switching range adjustment with r swr referenced to r swr = 365 k w - 40 - +12 db t amb operating ambient temperature - 25 - +75 c
1996 feb 09 4 philips semiconductors product speci?cation hands-free ic TEA1093 block diagram fig.1 block diagram. handbook, full pagewidth buffer buffer buffer buffer log log logic voice switch dynamic limiter volume control c mic r mic r tsen v ref r gat r idt c swt r stab r swr r vol c tsen c tenv c tnoi c rnoi c renv c rsen c lsp1 c dlc r rsen v dt r gar v bb 19 7 9 mutet microphone channel supply to tea106x duplex controller TEA1093 22 28 27 26 23 24 25 5 6 1 4 mic tsen tenv tnoi rnoi renv rsen gar 2 lsp1 from voltage stabilizer lsp2 rin2 vol 11 3 12 13 14 16 18 20 21 15 17 10 8 gnd swr stab swt idt micgnd mout gat dlc/ muter loudspeaker channel 13 mv 13 mv attenuator rin1 2 from tea106x from tea106x v i i v - 1 v i i v mgd216 315 mv tr1 sup to tea106x to tea106x sref pd va v bb c vbb tr2 to dynamic limiter voltage stabilizer power down switch v v
1996 feb 09 5 philips semiconductors product speci?cation hands-free ic TEA1093 pinning symbol pin description dlc/ muter 1 dynamic limiter timing adjustment, receiver channel mute input rin1 2 receiver ampli?er input 1 rin2 3 receiver ampli?er input 2 lsp2 4 loudspeaker ampli?er output 2 gar 5 receiver gain adjustment lsp1 6 loudspeaker ampli?er output 1 sref 7 supply reference input gnd 8 ground reference sup 9 supply input v bb 10 stabilized supply output vol 11 receiver volume adjustment swr 12 switching range adjustment stab 13 reference current adjustment swt 14 switch-over timing adjustment va 15 v bb voltage adjustment idt 16 idle mode timing adjustment pd 17 power-down input micgnd 18 ground reference for the microphone ampli?er mutet 19 transmit channel mute input mout 20 microphone ampli?er output gat 21 microphone gain adjustment mic 22 microphone input rnoi 23 receive noise envelope timing adjustment renv 24 receive signal envelope timing adjustment rsen 25 receive signal envelope sensitivity adjustment tnoi 26 transmit noise envelope timing adjustment tenv 27 transmit signal envelope timing adjustment tsen 28 transmit signal envelope sensitivity adjustment fig.2 pin configuration. handbook, halfpage TEA1093 mgd217 1 2 3 4 5 6 7 8 9 10 11 12 13 14 dlc/muter rin1 rin2 lsp2 gar lsp1 sref gnd sup v bb vol swr stab swt tsen tenv tnoi rsen renv rnoi mic gat mout mutet micgnd pd idt va 28 27 26 25 24 23 22 21 20 19 18 17 16 15
1996 feb 09 6 philips semiconductors product speci?cation hands-free ic TEA1093 functional description the values given in the functional description are typical values except when otherwise specified. a principle diagram of the tea106x is shown on the left side of fig.3. the tea106x is a transmission circuit of the tea1060 family intended for hand-set operation. it incorporates a receiving amplifier for the earpiece, a transmit amplifier for the microphone and a hybrid. for more details on the tea1060 family, please refer to data handbook ic03 . the right side of fig.3 shows a principle diagram of the TEA1093, a hands-free add-on circuit with a microphone amplifier, a loudspeaker amplifier and a duplex controller. as can be seen from fig.3, a loop is formed via the sidetone network in the transmission circuit and the acoustic coupling between loudspeaker and microphone of the hands-free circuit. when this loop gain is greater than 1, howling is introduced. in a full duplex application, this would be the case. the loop-gain has to be much lower than 1 and therefore has to be decreased to avoid howling. this is achieved by the duplex controller.the duplex controller of the TEA1093 detects which channel has the largest signal and then controls the gain of the microphone amplifier and the loudspeaker amplifier so that the sum of the gains remains constant. as a result, the circuit can be in three stable modes: 1. transmit mode (tx mode): the gain of the microphone amplifier is at its maximum and the gain of the loudspeaker amplifier is at its minimum. 2. receive mode (rx mode): the gain of the loudspeaker amplifier is at its maximum and the gain of the microphone amplifier is at its minimum. 3. idle mode: the gain of the amplifiers is halfway between their maximum and minimum value. the difference between the maximum gain and minimum gain is called the switching range. fig.3 hands-free telephone set principles. handbook, full pagewidth mgd218 hybrid duplex control telephone line acoustic coupling sidetone tea106x TEA1093
1996 feb 09 7 philips semiconductors product speci?cation hands-free ic TEA1093 supply: pins sup, sref, v bb , gnd, va and pd as can be seen from fig.4, the line current is divided between the speech-transmission circuit (i tr +i cc ) and the TEA1093 circuit (i sup ). it can be shown that: i sup =i line - i tr - i cc where: i tr =v sup - v sref /r sref v sup - v sref = 315 mv r sref = 100 w i cc ? 1ma it follows that i sup ? i line - 4 ma. the TEA1093 stabilizes its own supply voltage of 3.6 v at v bb . the voltage on v bb can be adjusted by means of an external resistor r va . when r va is connected between pin v a and gnd, the voltage on v bb is increased, when connected between pin v a and v bb , it is decreased. this is shown in fig.5. two capacitors of 4.7 nf (c sref and c stab ) are required to ensure stability of the supply block. when v sup is greater than v bb + 0.4 v, the current i sup is supplied to v bb via tr1. when v sup is less, the current is shunted to gnd via tr2, which prevents distortion on the line. to reduce current consumption during pulse dialling or register recall (flash), the TEA1093 is provided with a power-down (pd) input. when the voltage on pd is high, the current consumption from sup is 55 m a and from v bb 400 m a. therefore a capacitor of 470 m f (c vbb ) is sufficient to power the TEA1093 during pulse dialling. fig.4 supply arrangement. handbook, full pagewidth c stab 315 mv tr1 sup 9 7 8 sref c sref 4.7 nf r sref 100 w ln v cc slpe v ee gnd 4.7 nf pd va mgd219 15 17 10 v bb r va c vbb 470 m f tr2 to dynamic limiter voltage stabilizer tea106x TEA1093 power down switch v v line i sup i tr i cc i line
1996 feb 09 8 philips semiconductors product speci?cation hands-free ic TEA1093 fig.5 v bb as a function of r va . handbook, halfpage 10 2 6 8 mgd220 4 v bb (v) r va (k w ) 11010 2 10 3 3.6 v without rva rva(va-gnd) rva(va-vbb) microphone channel: pin mic, gat, mout, micgnd and mutet the TEA1093 has an asymmetrical microphone input mic with an input resistance of 20 k w . the gain of the input stage varies according to the mode of the TEA1093. in the transmit mode, the gain is at its maximum; in the receive mode, it is at its minimum and in the idle mode, it is halfway between maximum and minimum. switch-over from one mode to the other is smooth and click-free. the output capability at pin mout is 20 m a (rms). in the transmit mode, the overall gain of the microphone amplifier (from pin mic to mout) can be adjusted from 5 db up to 25 db to suit specific application requirements. the gain is proportional to the value of r gat and equals 15 db typical with r gat = 30.1 k w . a capacitor must be connected in parallel with r gat to ensure stability of the microphone amplifier. together with r gat , it also provides a first-order low-pass filter. by applying a high level on pin mutet, the microphone amplifier is muted and the TEA1093 is automatically forced into the receive mode. fig.6 microphone channel. handbook, full pagewidth mgd221 v i i v c mic v bb r mic mutet mic from voice switch to envelope detector micgnd mout gat 21 20 19 22 18 to tea106x r gat to logic
1996 feb 09 9 philips semiconductors product speci?cation hands-free ic TEA1093 fig.7 loudspeaker channel. handbook, full pagewidth mgd222 v i - 1 i v r gar gar lsp1 lsp2 dlc/muter c dlc c lsp1 1 4 6 5 to/from voice switch to envelope detector to logic rin2 rin1 2 3 11 from tea106x vol volume control dynamic limiter from voltage stabilizer r vol loudspeaker channel l oudspeaker amplifier : pins rin1, rin2, gar, lsp1 and lsp2 the TEA1093 has symmetrical inputs for the loudspeaker amplifier with an input resistance of 40 k w between rin1 and rin2 (2 20 k w ). the input stage can accommodate signals up to 390 mv (rms) at room temperature for 2% of total harmonic distortion (thd). the gain of the input stage varies according to the mode of the TEA1093. in the receive mode, the gain is at its maximum; in the transmit mode, it is at its minimum and in the idle mode, it is halfway between maximum and minimum. switch-over from one mode to the other is smooth and click-free. the rail-to-rail output stage is designed to power a loudspeaker which is connected as a single-ended load (between lsp1 and gnd) or as a bridge-tied load (between lsp1 and lsp2). in the receive mode, the overall gain of the loudspeaker amplifier can be adjusted from 3 db up to 39 db to suit specific application requirements. the gain from rin1 or rin2 to lsp1 is proportional to the value of r gar and equals 18 db with r gar = 66.5 k w . the second output lsp2 is in opposite phase with lsp1. therefore, in the basic application, the gain between rin1-rin2 to lsp1-lsp2 equals 24 db typical with r gar = 66.5 k w . a capacitor connected in parallel with r gar can be used to provide a first-order low-pass filter. v olume control : pin vol the loudspeaker amplifier gain can be adjusted with the potentiometer r vol . a linear potentiometer can be used to obtain logarithmic control of the gain at the loudspeaker amplifier. each 950 w increase of r vol results in a gain loss of 3 db. the maximum gain reduction with the volume control is internally limited to the switching range. d ynamic limiter : pin dlc/ muter the dynamic limiter of the TEA1093 prevents clipping of the loudspeaker output stages and protects the operation of the circuit when the supply condition falls below a certain level. hard clipping of the loudspeaker output stages is prevented by rapidly reducing the gain when the output stages start to saturate. the time in which gain reduction is effected (clipping attack time) is approximately a few milliseconds. the circuit stays in the reduced gain mode until the peaks of the loudspeaker signals no longer cause saturation. the gain of the loudspeaker amplifier then returns to its normal value within the clipping release time (typical 250 ms). both attack and release times are proportional to the value of the capacitor c dlc . the total harmonic distortion of the loudspeaker output stages, in reduced gain mode, stays below 5% up to 10 db (minimum) of input voltage overdrive [providing v rin is below 390 mv (rms)].
1996 feb 09 10 philips semiconductors product speci?cation hands-free ic TEA1093 when the supply conditions drop below the required level, the gain of the loudspeaker amplifier is reduced in order to prevent the TEA1093 from malfunctioning. only the gain of the loudspeaker amplifier is affected since it is considered to be the major power consuming part of the TEA1093. when the TEA1093 experiences a loss of current, the supply voltage v bb decreases. in this event, the gain of the loudspeaker amplifiers is slowly reduced (approximately a few seconds). when the supply voltage continues to decrease and drops below an internal voltage threshold of 2.75 v, the gain of the loudspeaker amplifier is rapidly reduced (approximately 1 ms). when normal supply conditions are resumed, the gain of the loudspeaker amplifier is increased again. this system ensures that in the event of large continuous signals, all current is used to power the loudspeaker while the voltage on pin v bb remains at its nominal value. by forcing a level lower than 0.2 v on pin dlc/ muter, the loudspeaker amplifier is muted and the TEA1093 is automatically forced into the transmit mode. duplex controller s ignal and noise envelope detectors : pins tsen, tenv, tnoi, rsen, renv and rnoi the signal envelopes are used to monitor the signal level strength in both channels. the noise envelopes are used to monitor background noise in both channels. the signal and noise envelopes provide inputs for the decision logic. the signal and noise envelope detectors are shown in fig.8. for the transmit channel, the input signal at mic is 40 db, amplified to tsen. for the receive channel, the differential signal between rin1 and rin2 is 0 db amplified to rsen. the signals from tsen and rsen are logarithmically compressed and buffered to tenv and renv respectively. the sensitivity of the envelope detectors is set with r tsen and r rsen . the capacitors connected in series with the two resistors block any dc component and form a first-order high-pass filter. in the basic application, see fig.16, it is assumed that v mic = 1 mv (rms) and v rin = 100 mv (rms) nominal and both r tsen and r rsen have a value of 10 k w . with the value of c tsen and c rsen at 100 nf, the cut-off frequency is at 160 hz. the buffer amplifiers leading the compressed signals to tenv and renv have a maximum source current of 120 m a and a maximum sink current of 1 m a. together with the capacitor c tenv and c renv , the timing of the signal envelope monitors can be set. in the basic application, the value of both capacitors is 470 nf. because of the logarithmic compression, each 6 db signal increase means 18 mv increase of the voltage on the envelopes tenv or renv at room temperature. thus, timings can be expressed in db/ms. at room temperature, the 120 m a sourced current corresponds to a maximum rise-slope of the signal envelope of 85 db/ms. this is sufficient to track normal speech signals. the 1 m a current sunk by tenv or renv corresponds to a maximum fall-slope of 0.7 db/ms. this is sufficient for a smooth envelope and also eliminates the effect of echoes on switching behaviour. fig.8 signal and noise envelope detectors. handbook, full pagewidth mgd223 log 28 (24) 27 (23) 26 (22) 25 (21) 24 (20) 23 (19) log from microphone amplifier from loudspeaker amplifier duplex controller tsen r tsen c tsen c tenv c tnoi r rsen c rsen c renv c rnoi tenv tnoi rsen renv rnoi to logic to logic
1996 feb 09 11 philips semiconductors product speci?cation hands-free ic TEA1093 fig.9 signal and noise envelope waveforms. handbook, full pagewidth mbg354 input signal signal envelope noise envelope 4 mv (rms) 1 mv (rms) a c c 36 mv 36 mv b b b a b time a: 85 db/ms b: 0.7 db/ms b: 0.7 db/ms c: 0.07 db/ms fig.10 decision logic. (1) when mutet = high, +10 m a is forced. when dlc/ muter < 0.2 v, - 10 m a is forced. g mgd224 13 mv 13 mv tenv tnoi renv mutet from dynamic limiter rnoi v dt xx11 - 10 m a + 10 m a + 10 m a x10x 1x0x xx10 0 000x 0 v ref r idt c swt swt 16 (12) 14 (11) 27 (23) 26 (22) 24 (20) 23 (19) 19 (15) idt duplex controller logic (1) attenuator
1996 feb 09 12 philips semiconductors product speci?cation hands-free ic TEA1093 to determine the noise level, the signal on tenv and renv are buffered to tnoi and rnoi. these buffers have a maximum source current of 1 m a and a maximum sink current of 120 m a. together with the capacitors c tnoi and c rnoi , the timing can be set. in the basic application of fig.16, the value of both capacitors is 4.7 m f. at room temperature, the 1 m a sourced current corresponds to a maximum rise-slope of the noise envelope of approximately 0.07 db/ms. this is small enough to track background noise and not to be influenced by speech bursts. the 120 m a current that is sunk corresponds to a maximum fall-slope of approximately 8.5 db/ms. however, during the decrease of the signal envelope, the noise envelope tracks the signal envelope so it will never fall faster than approximately 0.7 db/ms. the behaviour of the signal envelope and noise envelope monitors is illustrated in fig.9. d ecision logic : pins idt and swt the TEA1093 selects its mode of operation (transmit, receive or idle mode) by comparing the signal and the noise envelopes of both channels. this is executed by the decision logic. the resulting voltage on pin swt is the input for the voice-switch. to facilitate the distinction between signal and noise, the signal is considered as speech when its envelope is more than 4.3 db above the noise envelope. at room temperature, this is equal to a voltage difference v env - v noi = 13 mv. this so called speech/noise threshold is implemented in both channels. the signal on mic contains both speech and the signal coming from the loudspeaker (acoustic coupling). when receiving, the contribution from the loudspeaker overrules the speech. as a result, the signal envelope on tenv is formed mainly by the loudspeaker signal. to correct this, an attenuator is connected between tenv and the tenv/renv comparator. its attenuation equals that applied to the microphone amplifier. when a dial tone is present on the line, without monitoring, the tone would be recognized as noise because it is a signal with a constant amplitude. this would cause the TEA1093 to go into the idle mode and the user of the set would hear the dial tone fade away. to prevent this, a dial tone detector is incorporated which, in standard applications, does not consider input signals between rin1 and rin2 as noise when they have a level greater than 127 mv (rms). this level is proportional to r rsen . as can be seen from fig.10, the output of the decision logic is a current source. the logic table gives the relationship between the inputs and the value of the current source. it can charge or discharge the capacitor c swt with a current of 10 m a (switch-over). if the current is zero, the voltage on swt becomes equal to the voltage on idt via the high-ohmic resistor r idt (idling). the resulting voltage difference between swt and idt determines the mode of the TEA1093 and can vary between - 400 mv and +400 mv. table 1 modes of TEA1093 the switch-over timing can be set with c swt , the idle mode timing with c swt and r idt . in the basic application given in fig.16, c swt is 220 nf and r idt is 2.2 m w . this enables a switch-over time from transmit to receive mode or vice-versa of approximately 13 ms (580 mv swing on swt). the switch-over time from idle mode to transmit mode or receive mode is approximately 4 ms (180 mv swing on swt). the switch over, from receive mode or transmit mode to idle mode, is equal to 4 r idt c swt and is approximately 2 seconds (idle mode time). the inputs mutet and dlc/ muter overrule the decision logic. when mutet goes high, the capacitor c swt is charged with 10 m a thus resulting in the receive mode. when the voltage on pin dlc/ muter goes lower than 0.2 v, the capacitor is discharged with 10 m a thus resulting in the transmit mode. v oice - switch : pins stab and swr a diagram of the voice-switch is illustrated in fig.11. with the voltage on swt, the TEA1093 voice-switch regulates the gains of the transmit and the receive channel so that the sum of both is kept constant. v swt - v idt (mv) mode < - 180 transmit mode 0 idle mode >+180 receive mode
1996 feb 09 13 philips semiconductors product speci?cation hands-free ic TEA1093 in the transmit mode, the gain of the microphone amplifier is at its maximum and the gain of the loudspeaker amplifier is at its minimum. in the receive mode, the opposite applies. in the idle mode, both microphone and loudspeaker amplifier gains are halfway. the difference between maximum and minimum is the so called switching range. this range is determined by the ratio of r swr and r stab and is adjustable between 0 and 52 db. r stab should be 3.65 k w and sets an internally used reference current. in the basic application diagram given in fig.16, r swr is 365 k w which results in a switching range of 40 db. the switch-over behaviour is illustrated in fig.12. in the receive mode, the gain of the loudspeaker amplifier can be reduced using the volume control. since the voice-switch keeps the sum of the gains constant, the gain of the microphone amplifier is increased at the same time (see dashed curves in fig.12). in the transmit mode, however, the volume control has no influence on the gain of the microphone amplifier or the gain of the loudspeaker amplifier. consequently, the switching range is reduced when the volume is reduced. at maximum reduction of volume, the switching range becomes 0 db. fig.11 voice-switch. (1) c - constant. g vtx + g vrx = c (1) voice switch r stab r swr stab 13 (10) 12 (9) swr to microphone amplifier from swt from volume control to loudspeaker amplifier duplex controller mgd225 fig.12 switch-over behaviour. handbook, halfpage - 400 - 200 0 + 400 + 200 g vtx, g vrx v swt - v idt (mv) g vtx r vol ( w ) 5700 3800 idle mode 1900 0 0 1900 3800 5700 (10 db/div) tx mode rx mode g vrx mbg351
1996 feb 09 14 philips semiconductors product speci?cation hands-free ic TEA1093 limiting values in accordance with the absolute maximum rating system (iec 134). handling esd in accordance with mil std883c; method 3015 (hbm 1500 w , 100 pf); 3 pulses positive and 3 pulses negative on each pin referenced to ground. class 2: 2000 to 3999 v. thermal characteristics symbol parameter conditions min. max. unit v n(max) maximum voltage on all pins; except pins sup, sref, v bb , rin1 and rin2 v gnd - 0.4 v v bb + 0.4 v v v rinmax maximum voltage on pin rin1 or rin2 v gnd - 1.2 v v bb + 0.4 v v v bbmax maximum voltage on pin v bb v gnd - 0.4 v 12.0 v v srefmax maximum voltage on pin sref v gnd - 0.4 v v sup + 0.4 v v v supmax maximum voltage on pin sup v gnd - 0.4 v 12.0 v i supmax maximum current on pin sup see also figs 13 and 14 - 140 ma p tot total power dissipation see also figs 13 and 14; t amb =75 c TEA1093 - 910 mw TEA1093t - 670 mw t stg storage temperature - 40 +125 c t amb operating ambient temperature - 25 +75 c symbol parameter value unit r th j-a thermal resistance from junction to ambient in free air TEA1093 55 k/w TEA1093t 75 k/w
1996 feb 09 15 philips semiconductors product speci?cation hands-free ic TEA1093 fig.13 TEA1093 safe operating area. (1) t amb = 45 c; p tot = 1.45 w. (2) t amb = 55 c; p tot = 1.27 w. (3) t amb = 65 c; p tot = 1.09 w. (4) t amb = 75 c; p tot = 0.91 w. handbook, halfpage 468 12 150 50 130 (1) (2) (4) i sup (ma) mgd226 10 v sup (v) 110 90 70 (3) fig.14 TEA1093t safe operating area. (1) t amb = 25 c; p tot = 1.33 w. (2) t amb = 35 c; p tot = 1.20 w. (3) t amb = 45 c; p tot = 1.07 w. (4) t amb = 55 c; p tot = 0.93 w. (5) t amb = 65 c; p tot = 0.80 w. (6) t amb = 75 c; p tot = 0.67 w. handbook, halfpage 468 12 150 50 130 (1) (4) i sup (ma) mgd227 10 v sup (v) 110 90 70 (3) (5) (6) (2)
1996 feb 09 16 philips semiconductors product speci?cation hands-free ic TEA1093 characteristics v sref = 4.2 v; v gnd =0v; i sup = 15 ma; v sup = 0 v (rms); f = 1 khz; t amb =25 c; pd = low; mutet = low; r l =50 w ; r vol =0 w ; measured in test circuit of fig.15; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit supply (va, sref, sup, v bb , gnd and pd) v bb stabilized supply voltage 3.35 3.6 3.85 v d v bb(isup) v bb variation with i sup i sup = 15 to 140 ma - 20 - mv d v bb(t) v bb variation with temperature referenced to 25 c t amb = - 25 to + 75 c - 20 - mv d v bb(rva) v bb adjustment with r va between va and v bb ; r va = 180 k w - 3.2 - v between va and gnd; v sref = 4.9 v; r va =56k w - 4.5 - v i sup(min) minimum operating current - 5.5 7.0 ma v sup - v bb minimum dc voltage drop between pin sup and v bb 0.4 -- v v sup - v sref internal reference voltage 275 315 355 mv thd total harmonic distortion of ac signal on sup v sup = 1 v (rms) - 0.5 - % power-down input pd v il low level input voltage v gnd - 0.4 v - 0.3 v v ih high level input voltage 1.5 - v bb + 0.4 v v i pd input current in power-down condition pd = high - 2.5 5.0 m a i sup(pd) current consumption from pin sup in power-down condition pd = high; v sup = 4.5 v - 55 75 m a i bb(pd) current consumption from pin v bb in power-down condition pd = high; v bb = 3.6 v - 400 550 m a
1996 feb 09 17 philips semiconductors product speci?cation hands-free ic TEA1093 microphone channel (mic, gat, mout, mutet and micgnd) m icrophone amplifier ? z i ? input impedance between pin mic and micgnd 17 20 23 k w g vtx voltage gain from pin mic to mout in transmit mode v mic = 1 mv (rms) 12.5 15 17.5 db d g vtxr voltage gain adjustment with r gat - 10 - +10 db d g vtxt voltage gain variation with temperature referenced to 25 c v mic = 1 mv (rms); t amb = - 25 to +75 c - 0.3 - db d g vtxf voltage gain variation with frequency referenced to 1 khz v mic = 1 mv (rms); f = 300 to 3400 hz - 0.3 - db v notx noise output voltage at pin mout pin mic connected to micgnd through 200 w in series with 10 m f; psophometrically weighted (p53 curve) -- 100 - dbmp t ransmit mute input mutet v il low level input voltage v gnd - 0.4 v - 0.3 v v ih high level input voltage 1.5 - v bb + 0.4 v v i mutet input current mutet = high - 2.5 5 m a d g vtxm voltage gain reduction with mutet active mutet = high - 80 - db loudspeaker channel (rin1, rin2, gar, lsp1, lsp2 and dlc/ muter) l oudspeaker amplifier ? z i ? input impedance between pins rin1 or rin2 and gnd 17 20 23 k w between pins rin1 and rin2 34 40 46 k w g vrx voltage gain in receive mode v rin = 20 mv (rms) the difference between rin1 and rin2 to the difference between lsp1 and lsp2, bridge-tied load 21.5 24 26.5 db the difference between rin1 and rin2 to lsp1 or lsp2, single-ended load 15.5 18 20.5 db d g vrxr voltage gain adjustment with r gar - 15 - +15 db d g vrxt voltage gain variation with temperature referenced to 25 c v rin = 20 mv (rms); t amb = -25 to +75 c - 0.3 - db symbol parameter conditions min. typ. max. unit
1996 feb 09 18 philips semiconductors product speci?cation hands-free ic TEA1093 d g vrxf voltage gain variation with frequency referenced to 1 khz v rin = 20 mv (rms); f = 300 to 3400 hz - 0.3 - db v rin(rms) maximum input voltage between rin1 and rin2 (rms value) for 2% thd in input stage; r gar = 11.8 k w - 390 - mv v norx(rms) noise output voltage at pin lsp1 or lsp2 (rms value) inputs rin1 and rin2 short-circuited through 200 w in series with 10 m f; psophometrically weighted (p53 curve) - 80 -m v cmrr common mode rejection ratio - 50 - db d g vrxv voltage gain variation related to d r vol = 950 w when total attenuation does not exceed the switching range - 3 - db o utput capability v ose(p-p) single-ended load (peak-to-peak value) v rin = 150 mv (rms); i sup = 11 ma; note 1 1.2 1.45 - v v rin = 150 mv (rms); i sup = 16.5 ma; note 2 2.5 2.9 - v v obtl(p-p) bridge-tied load (peak-to-peak value) v rin = 150 mv (rms); i sup = 27 ma; note 2 2.5 2.9 - v v rin = 150 mv (rms); i sup = 35 ma; note 3 3.5 4.0 - v v rin = 150 mv (rms); i sup =62ma; r l =33 w; note 4 - 5.15 - v ? i om(max) ? maximum output current at lsp1 or lsp2 (peak value) 150 300 - ma d ynamic limiter t att attack time when v rin jumps from 20 mv to 20 mv + 10 db r gar = 374 k w ; i sup =20ma -- 5ms t rel release time when v rin jumps from 20 mv + 10 db to 20 mv r gar = 374 k w ; i sup =20ma - 250 - ms thd total harmonic distortion at v rin = 20 mv + 10 db r gar = 374 k w ; i sup = 20 ma; t > t att - 0.9 5 % v bb(th) v bb limiter threshold - 2.75 - v t att attack time when v bb jumps below v bb(th) - 1 - ms symbol parameter conditions min. typ. max. unit
1996 feb 09 19 philips semiconductors product speci?cation hands-free ic TEA1093 m ute receive v dlc(th) threshold voltage required on pin dlc/ muter to obtain mute receive condition v gnd - 0.4 v - 0.2 v i dlc(th) threshold current sourced by pin dlc/ muter in mute receive condition v dlc = 0.2 v - 80 -m a d g vrxm voltage gain reduction in mute receive condition v dlc < 0.2 v - 80 - db envelope and noise detectors (tsen, tenv, rsen and renv) p reamplifiers g v(tsen) voltage gain from mic to tsen 38 40 42 db g v(rsen) voltage gain between rin1 and rin2 to rsen. - 2 0 +2 db l ogarithmic compressor and sensitivity adjustment d v det(tsen) sensitivity detection on pin tsen; voltage change on pin tenv when doubling the current from tsen i tsen = 0.8 to 160 m a - 18 - mv d v det(rsen) sensitivity detection on pin rsen; voltage change on pin renv when doubling the current from rsen i rsen = 0.8 to 160 m a - 18 - mv s ignal envelope detectors i source(env) maximum current sourced from pin tenv or renv - 120 -m a i sink(env) maximum current sunk by pin tenv or renv 0.75 1 1.25 m a d v env voltage difference between pin renv and tenv when 10 m a is sourced from both rsen and tsen; envelope detectors tracking; note 5 - 3 - mv n oise envelope detectors i source(noi) maximum current sourced from pin tnoi or rnoi 0.75 1 1.25 m a i sink(noi) maximum current sunk by pin tnoi or rnoi - 120 -m a d v noi voltage difference between pin rnoi and tnoi when 5 m a is sourced from both rsen and tsen; noise detectors tracking; note 5 - 3 - mv symbol parameter conditions min. typ. max. unit
1996 feb 09 20 philips semiconductors product speci?cation hands-free ic TEA1093 notes 1. corresponds to 5 mw output power. 2. corresponds to 20 mw output power. 3. corresponds to 40 mw output power. 4. corresponds to 100 mw output power. 5. corresponds to 1 db tracking. 6. corresponds to 4.3 db noise/speech recognition level. d ial tone detector v rindt(rms) threshold level at pin rin1 and rin2 (rms value) - 127 - mv decision logic (idt and swt) s ignal recognition d v srx(th) threshold voltage between pin renv and rnoi to switch-over from receive to idle mode v rin < v rindt ; note 6 - 13 - mv d v stx(th) threshold voltage between pin tenv and tnoi to switch-over from transmit to idle mode note 6 - 13 - mv s witch - over i source(swt) current sourced from pin swt when switching to receive mode 7.5 10 12.5 m a i sink(swt) current sunk by pin swt when switching to transmit mode 7.5 10 12.5 m a i idle(swt) current sourced from pin swt in idle mode - 0 -m a voice switch (stab and swr) swra switching range - 40 - db d swra switching range adjustment with r swr referenced to 365 k w - 40 - 12 db | d g v | voltage gain variation from transmit mode to idle mode on both channels - 20 - db g tr gain tracking (g vtx +g vrx ) during switching, referenced to idle mode - 0.5 - db symbol parameter conditions min. typ. max. unit
1996 feb 09 21 philips semiconductors product speci?cation hands-free ic TEA1093 handbook, full pagewidth r gat c rin2 mutet mout sref gat rin2 micgnd gnd 25 24 23 28 27 26 111 idt rsen renv rnoi tsen tenv tnoi dlc/muter vol lsp1 gar mic lsp2 r idt c swt 220 nf swt stab swr va 2.2 m w r stab 3.65 k w 365 k w r swr 66.5 k w c vbb r va v bb 470 m f 4.7 m f 220 nf c mic v mic r gar 50 w r l r vol c tnoi 47 m f c lsp1 c tenv 470 nf c tsen 100 nf c rnoi 4.7 m f c renv 470 nf c rsen v rin1 v sref i sup 100 nf r rsen 10 k w 30.1 k w r sref 100 w r tsen 10 k w 7 sup 919 pd 17 16 14 13 12 6 5 4 22 15 10 8 18 3 2 21 20 220 nf 4.2 v c rin1 rin1 220 nf 470 nf c dlc TEA1093 mgd228 fig.15 test circuit.
1996 feb 09 22 philips semiconductors product speci?cation hands-free ic TEA1093 application information handbook, full pagewidth tea106x TEA1093 line v cc v ee slpe ln qr + mic - mic + r rsen c rsen c renv c rnoi c tsen c tnoi c tenv c swt r mic c mic r swr c vbb c lsp1 47 m f 10 k w 30.1 k w 20 w 365 k w r stab r idt 3.65 k w 2.2 m w r gar 66.5 k w r9 8 18 3 4 22 10 5 25 24 23 28 27 26 6 620 w 100 w r1 r sref r tsen r vol 10 k w 100 nf c rin2 c gat c sref r gat 100 nf 470 nf 470 nf 4.7 m f 100 m f c1 4.7 m f 470 m f 100 nf 100 nf 220 nf c stab 4.7 nf 79 rin2 2 21 20 c rin1 100 nf rin1 sref idt swt swr stab mout gat micgnd gnd rsen renv rnoi tsen tenv tnoi vol v bb gar mic lsp2 lsp1 sup 19 17 16 14 13 12 mutet pd c8 100 nf 4.7 nf c7 100 nf lsp 50 w from microcontroller 15 va c dlc 111 470 nf dlc/muter mgd229 fig.16 basic application diagram.
1996 feb 09 23 philips semiconductors product speci?cation hands-free ic TEA1093 handbook, full pagewidth interrupter dp mout micgnd rin2 rin1 gnd r mic sref sup 17 19 9 7 v ee v cc c lsp1 c rin1 c vbb c stab c mic c 1 100 m f c sref 4.7 nf 100 m f r1 620 w r9 20 w r sref 100 w 390 w 10 m f 470 m f 100 nf 4.7 nf c 8 100 nf lsp 50 w dtmf dtmf qr + lsp1 s2 s1 c7b 100 nf c7a 100 nf mic + mic - ln slpe mic v bb mutet from microcontroller pd 22 6 10 8 3 2 20 18 tip ring tea106x TEA1093 100 nf c rin2 100 nf microcontroller mgd230 fig.17 application proposal.
1996 feb 09 24 philips semiconductors product speci?cation hands-free ic TEA1093 package outlines unit a max. 1 2 b 1 (1) (1) (1) cd e w em h l references outline version european projection issue date iec jedec eiaj mm inches dimensions (inch dimensions are derived from the original mm dimensions) sot117-1 92-11-17 95-01-14 a min. a max. b z max. m e e 1 1.7 1.3 0.53 0.38 0.32 0.23 36.0 35.0 14.1 13.7 3.9 3.4 0.25 2.54 15.24 15.80 15.24 17.15 15.90 1.7 5.1 0.51 4.0 0.066 0.051 0.020 0.014 0.013 0.009 1.41 1.34 0.56 0.54 0.15 0.13 0.01 0.10 0.60 0.62 0.60 0.68 0.63 0.067 0.20 0.020 0.16 051g05 mo-015ah m h c (e ) 1 m e a l seating plane a 1 w m b 1 e d a 2 z 28 1 15 14 b e pin 1 index 0 5 10 mm scale note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. handbook, full pagewidth dip28: plastic dual in-line package; 28 leads (600 mil) sot117-1
1996 feb 09 25 philips semiconductors product speci?cation hands-free ic TEA1093 unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p q z y w v q references outline version european projection issue date iec jedec eiaj mm inches 2.65 0.30 0.10 2.45 2.25 0.49 0.36 0.32 0.23 18.1 17.7 7.6 7.4 1.27 10.65 10.00 1.1 1.0 0.9 0.4 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 1.1 0.4 sot136-1 x 14 28 w m q a a 1 a 2 b p d h e l p q detail x e z c l v m a e 15 1 (a ) 3 a y 0.25 075e06 ms-013ae pin 1 index 0.10 0.012 0.004 0.096 0.089 0.019 0.014 0.013 0.009 0.71 0.69 0.30 0.29 0.050 1.4 0.055 0.419 0.394 0.043 0.039 0.035 0.016 0.01 0.25 0.01 0.004 0.043 0.016 0.01 0 5 10 mm scale so28: plastic small outline package; 28 leads; body width 7.5 mm sot136-1 95-01-24 97-05-22
1996 feb 09 26 philips semiconductors product speci?cation hands-free ic TEA1093 soldering plastic dual in-line packages b y dip or wave the maximum permissible temperature of the solder is 260 c; this temperature must not be in contact with the joint for more than 5 s. the total contact time of successive solder waves must not exceed 5 s. the device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified storage maximum. if the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. r epairing soldered joints apply the soldering iron below the seating plane (or not more than 2 mm above it). if its temperature is below 300 c, it must not be in contact for more than 10 s; if between 300 and 400 c, for not more than 5 s. plastic small outline packages b ywave during placement and before soldering, the component must be fixed with a droplet of adhesive. after curing the adhesive, the component can be soldered. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder bath is 10 s, if allowed to cool to less than 150 c within 6 s. typical dwell time is 4 s at 250 c. a modified wave soldering technique is recommended using two solder waves (dual-wave), in which a turbulent wave with high upward pressure is followed by a smooth laminar wave. using a mildly-activated flux eliminates the need for removal of corrosive residues in most applications. b y solder paste reflow reflow soldering requires the solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the substrate by screen printing, stencilling or pressure-syringe dispensing before device placement. several techniques exist for reflowing; for example, thermal conduction by heated belt, infrared, and vapour-phase reflow. dwell times vary between 50 and 300 s according to method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 min. at 45 c. r epairing soldered joints ( by hand - held soldering iron or pulse - heated solder tool ) fix the component by first soldering two, diagonally opposite, end pins. apply the heating tool to the flat part of the pin only. contact time must be limited to 10 s at up to 300 c. when using proper tools, all other pins can be soldered in one operation within 2 to 5 s at between 270 and 320 c. (pulse-heated soldering is not recommended for so packages.) for pulse-heated solder tool (resistance) soldering of vso packages, solder is applied to the substrate by dipping or by an extra thick tin/lead plating before package placement.
1996 feb 09 27 philips semiconductors product speci?cation hands-free ic TEA1093 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
philips semiconductors C a worldwide company argentina: ierod, av. juramento 1992 - 14.b, (1428) buenos aires, tel. (541)786 7633, fax. (541)786 9367 australia: 34 waterloo road, north ryde, nsw 2113, tel. (02)805 4455, fax. (02)805 4466 austria: triester str. 64, a-1101 wien, p.o. box 213, tel. (01)60 101-1236, fax. (01)60 101-1211 belgium: postbus 90050, 5600 pb eindhoven, the netherlands, tel. (31)40-2783749, fax. (31)40-2788399 brazil: rua do rocio 220 - 5 th floor, suite 51, cep: 04552-903-s?o paulo-sp, brazil, p.o. box 7383 (01064-970), tel. (011)821-2333, fax. (011)829-1849 canada: philips semiconductors/components: tel. (800) 234-7381, fax. (708) 296-8556 chile: av. santa maria 0760, santiago, tel. (02)773 816, fax. (02)777 6730 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. (852)2319 7888, fax. (852)2319 7700 colombia: iprelenso ltda, carrera 21 no. 56-17, 77621 bogota, tel. (571)249 7624/(571)217 4609, fax. (571)217 4549 denmark: prags boulevard 80, pb 1919, dk-2300 copenhagen s, tel. (45)32 88 26 36, fax. (45)31 57 19 49 finland: sinikalliontie 3, fin-02630 espoo, tel. (358)0-615 800, fax. (358)0-61580 920 france: 4 rue du port-aux-vins, bp317, 92156 suresnes cedex, tel. (01)4099 6161, fax. (01)4099 6427 germany: p.o. box 10 51 40, 20035 hamburg, tel. (040)23 53 60, fax. (040)23 53 63 00 greece: no. 15, 25th march street, gr 17778 tavros, tel. (01)4894 339/4894 911, fax. (01)4814 240 india: philips india ltd, shivsagar estate, a block, dr. annie besant rd. worli, bombay 400 018 tel. (022)4938 541, fax. (022)4938 722 indonesia: philips house, jalan h.r. rasuna said kav. 3-4, p.o. box 4252, jakarta 12950, tel. (021)5201 122, fax. (021)5205 189 ireland: newstead, clonskeagh, dublin 14, tel. (01)7640 000, fax. (01)7640 200 italy: philips semiconductors s.r.l., piazza iv novembre 3, 20124 milano, tel. (0039)2 6752 2531, fax. (0039)2 6752 2557 japan: philips bldg 13-37, kohnan 2 -chome, minato-ku, tokyo 108, tel. (03)3740 5130, fax. (03)3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. (02)709-1412, fax. (02)709-1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. (03)750 5214, fax. (03)757 4880 mexico: 5900 gateway east, suite 200, el paso, tx 79905, tel. 9-5(800)234-7381, fax. (708)296-8556 netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. (040)2783749, fax. (040)2788399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. (09)849-4160, fax. (09)849-7811 norway: box 1, manglerud 0612, oslo, tel. (022)74 8000, fax. (022)74 8341 pakistan: philips electrical industries of pakistan ltd., exchange bldg. st-2/a, block 9, kda scheme 5, clifton, karachi 75600, tel. (021)587 4641-49, fax. (021)577035/5874546 philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. (63) 2 816 6380, fax. (63) 2 817 3474 portugal: philips portuguesa, s.a., rua dr. antnio loureiro borges 5, arquiparque - miraflores, apartado 300, 2795 linda-a-velha, tel. (01)4163160/4163333, fax. (01)4163174/4163366 singapore: lorong 1, toa payoh, singapore 1231, tel. (65)350 2000, fax. (65)251 6500 south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430, johannesburg 2000, tel. (011)470-5911, fax. (011)470-5494 spain: balmes 22, 08007 barcelona, tel. (03)301 6312, fax. (03)301 42 43 sweden: kottbygatan 7, akalla. s-164 85 stockholm, tel. (0)8-632 2000, fax. (0)8-632 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. (01)488 2211, fax. (01)481 77 30 taiwan: philips taiwan ltd., 23-30f, 66, chung hsiao west road, sec. 1. taipeh, taiwan roc, p.o. box 22978, taipei 100, tel. (886) 2 382 4443, fax. (886) 2 382 4444 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, thailand, tel. (66) 2 745-4090, fax. (66) 2 398-0793 turkey: talatpasa cad. no. 5, 80640 gltepe/istanbul, tel. (0 212)279 27 70, fax. (0212)282 67 07 ukraine: philips ukraine, 2a akademika koroleva str., office 165, 252148 kiev, tel. 380-44-4760297, fax. 380-44-4766991 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. (0181)730-5000, fax. (0181)754-8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. (800)234-7381, fax. (708)296-8556 uruguay: coronel mora 433, montevideo, tel. (02)70-4044, fax. (02)92 0601 internet: http://www.semiconductors.philips.com/ps/ for all other countries apply to: philips semiconductors, international marketing and sales, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, telex 35000 phtcnl, fax. +31-40-2724825 scds47 ? philips electronics n.v. 1996 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. printed in the netherlands 417021/1100/03/pp28 date of release: 1996 feb 09 document order number: 9397 750 00634

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